The description of the electronic structure of an interface between two materials is one of the main goals of solid state theory. In the case of a metal-semiconductor interface a basic problem is the calculation of Schottky barriers. A review is presented in which different theories on the formation of the Schottky barrier are discussed. The role of the interface states and their physical origin are discussed. Particular attention will be paid to the question whether the barrier heights are influenced by the details of the interface structure.

Theoretical approaches to the Schottky Barrier Problem / Ossicini, Stefano. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 56-58:(1992), pp. 290-300.

Theoretical approaches to the Schottky Barrier Problem

OSSICINI, Stefano
1992-01-01

Abstract

The description of the electronic structure of an interface between two materials is one of the main goals of solid state theory. In the case of a metal-semiconductor interface a basic problem is the calculation of Schottky barriers. A review is presented in which different theories on the formation of the Schottky barrier are discussed. The role of the interface states and their physical origin are discussed. Particular attention will be paid to the question whether the barrier heights are influenced by the details of the interface structure.
56-58
290
300
Theoretical approaches to the Schottky Barrier Problem / Ossicini, Stefano. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 56-58:(1992), pp. 290-300.
Ossicini, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/305322
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