An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].
Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires / M., C., A., T., M., L., L., V., M., D.G., A., P., R., R., R., C., O., M., Goldoni, G., F., R., Molinari, E., P., C.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - STAMPA. - 87:5(2000), pp. 2261-2264. [10.1063/1.372170]
Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires
GOLDONI, Guido;MOLINARI, Elisa;
2000
Abstract
An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%-3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra. (C) 2000 American Institute of Physics. [S0021-8979(00)07905-6].
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