NROM(TM)-is a new technology for non-volatile memories (NVMs); it offers three major improvements relative to the Floating Gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F(2)/bit in Flash, where F is the feature size of the process), and simpler process with reduced number of masks without any exotic materials. The NROM(TM) cell is based on localized charge trapping above the junction edge, storing two physically separated bits per cell. Performance of new NVM NROM(TM) based products show endurance up to 100 K with retention of 10 years at 150 degreesC. (C) 2002 Elsevier Science Ltd. All rights reserved.

NROM (TM) - a new technology for non-volatile memory products / I., Bloom; Pavan, Paolo; B., Eitan. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - ELETTRONICO. - 46:(2002), pp. 1757-1763.

NROM (TM) - a new technology for non-volatile memory products

PAVAN, Paolo;
2002

Abstract

NROM(TM)-is a new technology for non-volatile memories (NVMs); it offers three major improvements relative to the Floating Gate technology: one technology for all NVM products (Flash, EEPROM, ROM and Embedded), higher density (2.5F(2)/bit in Flash, where F is the feature size of the process), and simpler process with reduced number of masks without any exotic materials. The NROM(TM) cell is based on localized charge trapping above the junction edge, storing two physically separated bits per cell. Performance of new NVM NROM(TM) based products show endurance up to 100 K with retention of 10 years at 150 degreesC. (C) 2002 Elsevier Science Ltd. All rights reserved.
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NROM (TM) - a new technology for non-volatile memory products / I., Bloom; Pavan, Paolo; B., Eitan. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - ELETTRONICO. - 46:(2002), pp. 1757-1763.
I., Bloom; Pavan, Paolo; B., Eitan
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/304502
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