The optical properties of Si/CaF2 multiple quantum wells are studied ab initio by means of the linear-muffin-tin-orbital method. In particular, we investigate the dependence of the optoelectronic properties on the thickness of the Si wells. We find that below a well width of similar to 20 Angstrom, new transitions appear in the optical region with an evident polarization dependence. The oscillator strength of these transitions shows a dramatic increase as the width of the Si well decreases. A comparison is made with recent experimental work on similar systems. Our results show that quantum confinement and passivation are necessary in order to have photoluminescence in confined silicon-based materials.
First-principles optical properties of Si/CaF2 multiple quantum wells / Degoli, Elena; Ossicini, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 57:(1998), pp. 14776-14782.
First-principles optical properties of Si/CaF2 multiple quantum wells
DEGOLI, Elena;OSSICINI, Stefano
1998
Abstract
The optical properties of Si/CaF2 multiple quantum wells are studied ab initio by means of the linear-muffin-tin-orbital method. In particular, we investigate the dependence of the optoelectronic properties on the thickness of the Si wells. We find that below a well width of similar to 20 Angstrom, new transitions appear in the optical region with an evident polarization dependence. The oscillator strength of these transitions shows a dramatic increase as the width of the Si well decreases. A comparison is made with recent experimental work on similar systems. Our results show that quantum confinement and passivation are necessary in order to have photoluminescence in confined silicon-based materials.Pubblicazioni consigliate
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