A novel termination structure for silicon microstrip detectors is proposed, featuring all p-type multiguard and scribe-line implants, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved both prior and after 1e12 /cm2 neutron irradiation.
A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants / G. F., Dalla Betta; M., Boscardin; L., Bosisio; S., Dittongo; P., Gregori; I., Rachevskaia; Verzellesi, Giovanni; N., Zorzi. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 49:4(2002), pp. 1712-1716. [10.1109/TNS.2002.801695]