The first theoretical analysis of the electronic properties of the Pb-Si(111) interface at monolayer coverage is presented. We have used the self-consistent linear muffin-tin orbital method with the atomic-sphere-approximation in a supercell geometry. The results show the presence of a discrete true interface state which is responsible of the pinning of the Fermi level and of the large Schottky barrier heights found for this system.
Fermi level pinning and interface states at Pb-Si(111) interface / Ossicini, Stefano; F., Bernardini. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 82:(1992), pp. 863-866.
Fermi level pinning and interface states at Pb-Si(111) interface
OSSICINI, Stefano;
1992
Abstract
The first theoretical analysis of the electronic properties of the Pb-Si(111) interface at monolayer coverage is presented. We have used the self-consistent linear muffin-tin orbital method with the atomic-sphere-approximation in a supercell geometry. The results show the presence of a discrete true interface state which is responsible of the pinning of the Fermi level and of the large Schottky barrier heights found for this system.
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