The growth modes of SrF2 on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface.

Structural and photoemission studies of SrF2 adsorption on Si(001) / Pasquali, Luca; Suturin, Sm; Balanev, A; Kaveev, Ak; Sokolov, Ns; Doyle, Bp; Borgatti, F; Giglia, A; Mahne, N; Pedio, M; Nannarone, Stefano. - In: JOURNAL DE PHYSIQUE IV. - ISSN 1155-4339. - STAMPA. - 132:(2006), pp. 35-39. [10.1051/jp4:2006132008]

Structural and photoemission studies of SrF2 adsorption on Si(001)

PASQUALI, Luca;NANNARONE, Stefano
2006

Abstract

The growth modes of SrF2 on Si(001) are investigated by AFM and ultraviolet photoemission. Two growth regimes are identified according to the substrate temperature during deposition, resulting in flat and ordered fluoride layers or in nano-patterned films with characteristic triangular islands. The flat layer growth obtained at high temperature is accompanied by molecular dissociation at the interface.
2006
132
35
39
Structural and photoemission studies of SrF2 adsorption on Si(001) / Pasquali, Luca; Suturin, Sm; Balanev, A; Kaveev, Ak; Sokolov, Ns; Doyle, Bp; Borgatti, F; Giglia, A; Mahne, N; Pedio, M; Nannarone, Stefano. - In: JOURNAL DE PHYSIQUE IV. - ISSN 1155-4339. - STAMPA. - 132:(2006), pp. 35-39. [10.1051/jp4:2006132008]
Pasquali, Luca; Suturin, Sm; Balanev, A; Kaveev, Ak; Sokolov, Ns; Doyle, Bp; Borgatti, F; Giglia, A; Mahne, N; Pedio, M; Nannarone, Stefano
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/2812
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