In this paper, a numerical simulation technique suitable for device-level analysis of ion-sensitive devices (ion-sensitive field-effect-transistor (ISFET) and light-addressable potentiometric sensor (LAPS)) is presented. Models of the charge layers which develop at the electrolyte–insulator interface of an electrolyte insulator-semiconductor (EIS) system are incorporated into the device equations, thus providing a self-consistent picture of charge and field distribution within the semiconductor domain. To accomplish the simulation of LAPS devices, an AC-modulated optical generation rate has been introduced as well. A TCAD tool, based on the proposed approach, has been developed, which allows for the electrical characterization and for the extraction of circuit-simulation parameters of ion-sensitive devices. Validation of the device-analysis technique comes from the comparison between predicted electrical responses and actual device measurements.
Numerical analysis of ISFET and LAPS devices / Verzellesi, Giovanni; Colalongo, L.; Passeri, D.; Margesin, B.; Rudan, M.; Soncini, G.; Ciampolini, P.. - In: SENSORS AND ACTUATORS. B, CHEMICAL. - ISSN 0925-4005. - STAMPA. - 44:(1997), pp. 402-408.
Numerical analysis of ISFET and LAPS devices
VERZELLESI, Giovanni;
1997
Abstract
In this paper, a numerical simulation technique suitable for device-level analysis of ion-sensitive devices (ion-sensitive field-effect-transistor (ISFET) and light-addressable potentiometric sensor (LAPS)) is presented. Models of the charge layers which develop at the electrolyte–insulator interface of an electrolyte insulator-semiconductor (EIS) system are incorporated into the device equations, thus providing a self-consistent picture of charge and field distribution within the semiconductor domain. To accomplish the simulation of LAPS devices, an AC-modulated optical generation rate has been introduced as well. A TCAD tool, based on the proposed approach, has been developed, which allows for the electrical characterization and for the extraction of circuit-simulation parameters of ion-sensitive devices. Validation of the device-analysis technique comes from the comparison between predicted electrical responses and actual device measurements.Pubblicazioni consigliate
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