pMOSFETs biased with Vgs<Vgd during Co60 gamma irradiation have shown substantial differences between the forward and reverse subthreshold characteristics, induced by a non-uniform charge distribution in the gate oxide. Correspondingly, modest differences have been observed in the over-threshold I-V characteristics. After irradiation, the forward subthreshold curves can shift at higher or lower gate voltages than the reverse ones. The former behaviour has been observed in long-channel devices, in agreement with the classical MOS theory and numerical simulations. The latter result has been obtained in short-channel devices, and it has been correlated to a parasitic punch-through conduction mechanism.
Forward and reverse characteristics of irradiated MOSFET's / Paccagnella, A.; Ceschia, M.; Verzellesi, Giovanni; Dalla Betta, G. F.; Bellutti, P.; Fuochi, P. G.; Soncini, G.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 43:(1996), pp. 797-804.
Forward and reverse characteristics of irradiated MOSFET's
VERZELLESI, Giovanni;
1996
Abstract
pMOSFETs biased with VgsPubblicazioni consigliate
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