In this paper, we will investigate SILC effects on the reliability of E2PROM memories. Particularly, we will analyze the influence on the retention properties of E2PROM memory devices of Program/Erase number of cycles and bias conditions, oxide thickness scaling and quality, and storage field. To accomplish this task, we will use a recently proposed compact E2PROM model, which has been extended to include SILC, thus bridging the gap between the oxide quality characterization activity performed on MOS transistors and capacitors, and the actual impact of SILC on the functioning of E2PROM memories.
SILC effects on EEPROM memory cell reliability / Larcher, Luca; Bertulu, S.; Pavan, Paolo. - In: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. - ISSN 1530-4388. - STAMPA. - 2:1(2002), pp. 13-18. [10.1109/TDMR.2002.1014668]
SILC effects on EEPROM memory cell reliability
LARCHER, Luca;PAVAN, Paolo
2002
Abstract
In this paper, we will investigate SILC effects on the reliability of E2PROM memories. Particularly, we will analyze the influence on the retention properties of E2PROM memory devices of Program/Erase number of cycles and bias conditions, oxide thickness scaling and quality, and storage field. To accomplish this task, we will use a recently proposed compact E2PROM model, which has been extended to include SILC, thus bridging the gap between the oxide quality characterization activity performed on MOS transistors and capacitors, and the actual impact of SILC on the functioning of E2PROM memories.
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