Insights provided by TCAD modelling into on- and off-state performance of pseudo-vertical diamond Schottky barrier diodes

Pseudo-vertical Schottky barrier diodes were fabricated on boron-doped diamond layers grown by microwave plasma chemical vapor deposition on high-pressure high-temperature and chemical vapor deposition substrates. Analysis of these devices by means of a coupled experimental/simulation approach has allowed on- and off-state operational regimes to be linked to technology-specific parameters, with the aim of providing useful indications for viable optimization routes. Specifically, compensation of boron doping by unintentional donor impurities like nitrogen is suggested to limit the diode on-state conductance, while acceptor surface defects are suggested to critically influence the reverse leakage current and breakdown, so that their reduction or passivation can enable significant breakdown voltage increase.