work reports a tunable-capacitance resistive memory (TCReRAM) device. The TCReRAM uses a binary metal-oxide active-layer and exhibits strong voltagedependent capacitance (VDC) under appropriate operating conditions. The observed VDC dynamics is characterized experimentally, and its physical origin is investigated through comprehensive multiscale simulations. The developed TCReRAM device, integrated at the floating diffusion node of a CMOS image sensor (CIS) pixel, introduces VDC that helps mitigate saturation under high illumination conditions. Pixel-level simulations further demonstrate that incorporating the TCReRAM significantly improves the dynamic range by nearly 25% compared to the existing reported Hybrid CIS, effectively addressing performance limitations across varying illumination levels.
A Tunable Capacitance ReRAM for Improvement of Dynamic Range in CMOS Image Sensors / Chourasia, S.; Pande, S.; Padovani, A.; Larcher, L.; Thareja, G.; Chakrabarti, B.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 47:3(2026), pp. 645-648. [10.1109/led.2025.3649829]
A Tunable Capacitance ReRAM for Improvement of Dynamic Range in CMOS Image Sensors
Padovani, A.;Larcher, L.;
2026
Abstract
work reports a tunable-capacitance resistive memory (TCReRAM) device. The TCReRAM uses a binary metal-oxide active-layer and exhibits strong voltagedependent capacitance (VDC) under appropriate operating conditions. The observed VDC dynamics is characterized experimentally, and its physical origin is investigated through comprehensive multiscale simulations. The developed TCReRAM device, integrated at the floating diffusion node of a CMOS image sensor (CIS) pixel, introduces VDC that helps mitigate saturation under high illumination conditions. Pixel-level simulations further demonstrate that incorporating the TCReRAM significantly improves the dynamic range by nearly 25% compared to the existing reported Hybrid CIS, effectively addressing performance limitations across varying illumination levels.
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