Analog Signal Rectification and Filtering by a Single Electrolyte-Gated Transistor Based on Reduced Graphene Oxide

Ambipolar materials integrating both p-type and n-type charge transport in Electrolyte-Gated transistors (EGTs) are attractive for simplification of circuit design and power reduction. They are demonstrated as promising candidates for the development of advanced computing systems and sensors. However, the investigation of ambipolar materials for signal processing is still largely unexplored. Among ambipolar materials, reduced graphene oxide (rGO) is shown to be suitable for EGTs, due to its high conductivity (conductivity > 1000 S cm(-1)) and its processability starting from aqueous graphene oxide dispersions. This work presents ambipolar rGO-EGTs that autonomously perform mathematical operations on oscillatory input signals: phase reversal, full- and half-wave rectification, band-stop and high-pass filtering, according to the operating EGT gate voltage. These results prompt rGO-EGTs as embedded building blocks for in situ real time analog signal processing.