The convergent beam electron diffraction technique (CBED) has been applied to determine the lattice strain in Si1-xGex/Si heterostructures and in local isolation structures. Both plan and cross TEM sections have been investigated. The values thus obtained are in good agreement with the ones deduced from other techniques, provided the relaxation of the TEM sample is taken into account. This effect can be overcome by the large angle CBED (LACBED) technique, which has also been used on plan sections of the SiGe structures.
Investigation of strain in Si1-xGex/Si heterostructures and local isolation structures by convergent beam electron diffraction / Armigliato, 4. A.; Balboni, R.; Frabboni, S.; Vanhellemont, J.. - In: DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA. - ISSN 1012-0394. - 32-33:(1993), pp. 547-552. (Intervento presentato al convegno 5th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 1993 tenutosi a deu nel 1993) [10.4028/www.scientific.net/SSP.32-33.547].
Investigation of strain in Si1-xGex/Si heterostructures and local isolation structures by convergent beam electron diffraction
S. Frabboni;
1993
Abstract
The convergent beam electron diffraction technique (CBED) has been applied to determine the lattice strain in Si1-xGex/Si heterostructures and in local isolation structures. Both plan and cross TEM sections have been investigated. The values thus obtained are in good agreement with the ones deduced from other techniques, provided the relaxation of the TEM sample is taken into account. This effect can be overcome by the large angle CBED (LACBED) technique, which has also been used on plan sections of the SiGe structures.
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