The doping of metal oxides is an interesting route to increase catalyst activity and lower activation temperatures in H-2 dissociation to replace Pt in catalysts for electrochemical devices. In this process, the roles of both the matrix and dopant cations are fundamental to understanding and designing more efficient catalysts. In this work, we have investigated the reduction process in pure and doped CeO2 films. We followed the oxidation states of Ce and dopants (Cu and Fe) during H-2 exposure at ambient pressure by combining X-ray absorption spectroscopy and gas chromatography on 5 nm films in the temperature range of 300-620 K. We have observed that Cu doping (at concentrations of 5 and 14 at. %) promotes the ceria reduction, while the addition of Fe seems to have a limited impact on the oxide chemical reactivity only at low temperatures. Moreover, thanks to the chemical sensitivity of operando X-ray absorption spectroscopy, we were able to follow simultaneously the evolution of Ce and Cu oxidation states during the reaction, which has permitted to identify two distinct reduction processes taking place above and below 500 K. These measurements show that at low temperatures, the H-2 dissociation takes place at the Cu1+ sites, thus explaining the higher reactivity of the Cu-doped samples. The described mechanism can help in the design of Pt-free catalysts with enhanced performances.
Role of Metal Dopants in Hydrogen Dissociation on Cu:CeO2 and Fe:CeO2 Surfaces Studied by Ambient-Pressure X-ray Absorption Spectroscopy / Vikatakavi, Avinash; Mauri, Silvia; Rivera-Salazar, Mario Leopoldo; Dobovičnik, Edvard; Pelatti, Samuele; D’Addato, Sergio; Torelli, Piero; Luches, Paola; Benedetti, Stefania. - In: ACS APPLIED ENERGY MATERIALS. - ISSN 2574-0962. - 7:7(2024), pp. 2746-2754. [10.1021/acsaem.3c03169]
Role of Metal Dopants in Hydrogen Dissociation on Cu:CeO2 and Fe:CeO2 Surfaces Studied by Ambient-Pressure X-ray Absorption Spectroscopy
Vikatakavi, Avinash;Pelatti, Samuele;D’Addato, Sergio;Luches, Paola;Benedetti, Stefania
2024
Abstract
The doping of metal oxides is an interesting route to increase catalyst activity and lower activation temperatures in H-2 dissociation to replace Pt in catalysts for electrochemical devices. In this process, the roles of both the matrix and dopant cations are fundamental to understanding and designing more efficient catalysts. In this work, we have investigated the reduction process in pure and doped CeO2 films. We followed the oxidation states of Ce and dopants (Cu and Fe) during H-2 exposure at ambient pressure by combining X-ray absorption spectroscopy and gas chromatography on 5 nm films in the temperature range of 300-620 K. We have observed that Cu doping (at concentrations of 5 and 14 at. %) promotes the ceria reduction, while the addition of Fe seems to have a limited impact on the oxide chemical reactivity only at low temperatures. Moreover, thanks to the chemical sensitivity of operando X-ray absorption spectroscopy, we were able to follow simultaneously the evolution of Ce and Cu oxidation states during the reaction, which has permitted to identify two distinct reduction processes taking place above and below 500 K. These measurements show that at low temperatures, the H-2 dissociation takes place at the Cu1+ sites, thus explaining the higher reactivity of the Cu-doped samples. The described mechanism can help in the design of Pt-free catalysts with enhanced performances.File | Dimensione | Formato | |
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