Thermoacoustic techniques are becoming popular in both laboratory and industrial environments because they provide a very sensitive method for investigating the properties of solids and liquids, through their effectiveness in absorbing an "exciting" radiation. In this paper we report some application of thermal wave measurements to silicon science and correlate the thermal wave response to the properties of the sample under investigation, obtained with techniques such as secondary ion mass spectrometry, transmission electron microscopy and carrier depth profiling. © 1990.
Thermal wave measurements in ion-implanted silicon / Queirolo, G.; Zaccherini, C.; Frabboni, S.. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - 5:2(1990), pp. 95-100. [10.1016/0921-5107(90)90038-D]
Thermal wave measurements in ion-implanted silicon
Frabboni S.Membro del Collaboration Group
1990
Abstract
Thermoacoustic techniques are becoming popular in both laboratory and industrial environments because they provide a very sensitive method for investigating the properties of solids and liquids, through their effectiveness in absorbing an "exciting" radiation. In this paper we report some application of thermal wave measurements to silicon science and correlate the thermal wave response to the properties of the sample under investigation, obtained with techniques such as secondary ion mass spectrometry, transmission electron microscopy and carrier depth profiling. © 1990.
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