The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, South Lake Tahoe, CA, USA. The workshop brings together reliability engineers and researchers from all around the world, to exchange ideas over four days in a welcoming, pleasant, and informal setting. The workshop focuses on the recent advances in research on semiconductor device reliability and the related challenges. Topics include transistor and front-end-of-the-line (FEOL) reliability, time-dependent dielectric breakdown (TDDB), bias temperature instability (BTI), hot carrier (HC), back-end-of-the-line (BEOL) reliability, electro-migration, circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis, wafer-level reliability, and many others. Specifically, in 2022 IIRW focus areas were circuit reliability (device-circuit degradation and aging), in-memory computing and neuromorphic reliability, plasma-induced damage (PID), and electrostatic discharge (ESD).
Guest Editorial TDMR IIRW Special Section / Puglisi, F. M.. - 23:3(2023), pp. 307-308. [10.1109/TDMR.2023.3306195]
Guest Editorial TDMR IIRW Special Section
Puglisi F. M.
Writing – Original Draft Preparation
2023
Abstract
The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, South Lake Tahoe, CA, USA. The workshop brings together reliability engineers and researchers from all around the world, to exchange ideas over four days in a welcoming, pleasant, and informal setting. The workshop focuses on the recent advances in research on semiconductor device reliability and the related challenges. Topics include transistor and front-end-of-the-line (FEOL) reliability, time-dependent dielectric breakdown (TDDB), bias temperature instability (BTI), hot carrier (HC), back-end-of-the-line (BEOL) reliability, electro-migration, circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis, wafer-level reliability, and many others. Specifically, in 2022 IIRW focus areas were circuit reliability (device-circuit degradation and aging), in-memory computing and neuromorphic reliability, plasma-induced damage (PID), and electrostatic discharge (ESD).
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