Discovering multifunctional materials is of paramount importance for advancing the science and technology. Herein, we report on an optical phenomenon modulated by an electrical process that happened at the metal-ZnO:Cu junction, for which the light emission intensity from the photoluminescence is tuned reversibly by applying electric bias to the junction. Importantly, these observations were correlated with the x-ray absorption measurements, detecting prominent flips in Cu+/Cu2+ oxidation state occupations in ZnO:Cu film as a function of the resistive switching. Moreover, further analysis of the x-ray absorption data revealed an additional prominent correlation - the signals interpreted as the Zn-O bond fingerprints also exhibited the modulations. By considering the whole set of data, we propose a scenario explaining the modulation phenomena.
Photoluminescence intensity of Cu-doped ZnO modulated via defect occupancy by applying electric bias / Ho, L. -P.; Younas, M.; Borgersen, J.; Khan, R. T. A.; Rezvani, S. J.; Pollastri, S.; Akhtar, M. J.; Nadeem, M.; Huang, D.; Shi, Y. -L.; Kuznetsov, A.; Ling, F. C. -C.. - In: JOURNAL OF PHYSICS D. APPLIED PHYSICS. - ISSN 0022-3727. - 55:31(2022), pp. N/A-N/A. [10.1088/1361-6463/ac6912]