III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, M; Roccato, N; Piva, F; De Santi, C; Brescancin, R; Casu, C; Caria, A; Mukherjee, K; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Mosca, M; Meneghesso, G; Zanoni, E; Meneghini, M. - 12022:(2022), pp. 126-136. ((Intervento presentato al convegno Light-Emitting Devices, Materials, and Applications XXVI tenutosi a San Francisco, CA, USA nel 2022 [10.1117/12.2606599].

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Verzellesi, G;
2022

Abstract

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Light-Emitting Devices, Materials, and Applications XXVI
San Francisco, CA, USA
2022
12022
126
136
Buffolo, M; Roccato, N; Piva, F; De Santi, C; Brescancin, R; Casu, C; Caria, A; Mukherjee, K; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Mosca, M; Meneghesso, G; Zanoni, E; Meneghini, M
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, M; Roccato, N; Piva, F; De Santi, C; Brescancin, R; Casu, C; Caria, A; Mukherjee, K; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Mosca, M; Meneghesso, G; Zanoni, E; Meneghini, M. - 12022:(2022), pp. 126-136. ((Intervento presentato al convegno Light-Emitting Devices, Materials, and Applications XXVI tenutosi a San Francisco, CA, USA nel 2022 [10.1117/12.2606599].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1291627
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