III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, M., Roccato, N., Piva, F., De Santi, C., Brescancin, R., Casu, C., Caria, A., Mukherjee, K., Haller, C., Carlin, J.f., Grandjean, N., Vallone, M., Tibaldi, A., Bertazzi, F., Goano, M., Verzellesi, G., Mosca, M., Meneghesso, G., Zanoni, E., Meneghini, M.. - 12022:(2022), pp. 126-136. (Light-Emitting Devices, Materials, and Applications XXVI 2022 San Francisco, CA, USA 2022) [10.1117/12.2606599].
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Verzellesi, G;
2022
Abstract
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
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