III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics / Buffolo, M; Roccato, N; Piva, F; De Santi, C; Brescancin, R; Casu, C; Caria, A; Mukherjee, K; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Mosca, M; Meneghesso, G; Zanoni, E; Meneghini, M. - 12022:(2022), pp. 126-136. (Intervento presentato al convegno Light-Emitting Devices, Materials, and Applications XXVI 2022 tenutosi a San Francisco, CA, USA nel 2022) [10.1117/12.2606599].
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Verzellesi, G;
2022
Abstract
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
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