In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss (<2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.
Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires / Kaplan, A. E.; Vitali, V.; Demontis, V.; Rossella, F.; Fontana, A.; Cornia, S.; Petropoulos, P.; Bellani, V.; Lacava, C.; Cristiani, I.. - In: NANOMATERIALS. - ISSN 2079-4991. - 12:14(2022), pp. N/A-N/A. [10.3390/nano12142438]
Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires
Rossella F.;
2022
Abstract
In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss (<2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.File | Dimensione | Formato | |
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