The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena. © 1992.

A study of ESD- induced defects in high-voltage nMOS and pMOS transistors / Pavan, P.; Zanoni, E.; Bonati, B.; Martion, S.; Libera, G. D.. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - 23:1(1992), pp. 45-50. [10.1016/0026-2692(92)90095-I]

A study of ESD- induced defects in high-voltage nMOS and pMOS transistors

Pavan P.;
1992-01-01

Abstract

The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena. © 1992.
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1
45
50
A study of ESD- induced defects in high-voltage nMOS and pMOS transistors / Pavan, P.; Zanoni, E.; Bonati, B.; Martion, S.; Libera, G. D.. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - 23:1(1992), pp. 45-50. [10.1016/0026-2692(92)90095-I]
Pavan, P.; Zanoni, E.; Bonati, B.; Martion, S.; Libera, G. D.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1287261
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