Films of different Yb thickness are deposited on (formula presented) and are annealed at increasing high temperature. The evolution of the valence-band electronic properties is followed with metastable deexcitation spectroscopy and photoemission. Different surface-structure phases are observed at progressively high annealing temperature. A (formula presented) ordered phase is observed by low-energy electron diffraction (LEED) after annealing of the films at about 640 °C and it is associated to the formation of a stable silicide. Correspondingly, electronic states assigned to the Yb (formula presented) hybridized band and to Si (formula presented) and (formula presented) bands in the compound are observed. A further increase of the annealing temperature causes the system to evolve rapidly. At (formula presented) the LEED pattern shows a (formula presented) periodicity. Above 700 °C, the films present a character similar to that of the Si substrate. © 2002 The American Physical Society.

Growth of epitaxial Yb silicide on Si(100) studied by metastable atom deexcitation spectroscopy and photemission / Pasquali, L.; D'Addato, S.; Nannarone, S.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 65:11(2002), pp. 1-10. [10.1103/PhysRevB.65.115417]

Growth of epitaxial Yb silicide on Si(100) studied by metastable atom deexcitation spectroscopy and photemission

Pasquali L.;D'Addato S.;Nannarone S.
2002

Abstract

Films of different Yb thickness are deposited on (formula presented) and are annealed at increasing high temperature. The evolution of the valence-band electronic properties is followed with metastable deexcitation spectroscopy and photoemission. Different surface-structure phases are observed at progressively high annealing temperature. A (formula presented) ordered phase is observed by low-energy electron diffraction (LEED) after annealing of the films at about 640 °C and it is associated to the formation of a stable silicide. Correspondingly, electronic states assigned to the Yb (formula presented) hybridized band and to Si (formula presented) and (formula presented) bands in the compound are observed. A further increase of the annealing temperature causes the system to evolve rapidly. At (formula presented) the LEED pattern shows a (formula presented) periodicity. Above 700 °C, the films present a character similar to that of the Si substrate. © 2002 The American Physical Society.
65
11
1
10
Growth of epitaxial Yb silicide on Si(100) studied by metastable atom deexcitation spectroscopy and photemission / Pasquali, L.; D'Addato, S.; Nannarone, S.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 65:11(2002), pp. 1-10. [10.1103/PhysRevB.65.115417]
Pasquali, L.; D'Addato, S.; Nannarone, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1287257
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