We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (?20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are discussed here; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions shown.

Combined HREM and theoretical analysis of SiC/Si interfaces / Grillo, V.; Frabboni, S.; Cicero, G.; Savini, G.; Catellani, A.. - (2018), pp. 69-72. [10.1201/9781351074636]

Combined HREM and theoretical analysis of SiC/Si interfaces

Grillo V.;Frabboni S.;
2018

Abstract

We performed molecular dynamics simulations to study the atomic structure of the β-SiC/Si(001) and (111) interfaces. The wide lattice mismatch between the two materials (?20%) introduces an array of misfit dislocations along the interface, responsible for releasing almost all the strain which would be present in a pseudomorphic structure. The interface termination, its stoichiometry and the core dislocation structures are discussed here; for the most stable heterostructures, the simulated HREM images are presented, and the features connected to the peculiar interface reconstructions shown.
2018
Microscopy of Semiconducting Materials 2003
9781351074636
CRC Press
Combined HREM and theoretical analysis of SiC/Si interfaces / Grillo, V.; Frabboni, S.; Cicero, G.; Savini, G.; Catellani, A.. - (2018), pp. 69-72. [10.1201/9781351074636]
Grillo, V.; Frabboni, S.; Cicero, G.; Savini, G.; Catellani, A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1281241
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