A multiscale simulation platform predicts the effect of atomic level defects in thin films on the electrical characteristics of nanoscale devices and identifies ways to engineer these defects to achieve optimum performance and reliability in logic and memory circuits.

Engineering Atom Scale Defects in Materials for Future Electronic Devices / Pramanik, D.; Nardi, F.; Padovani, A.. - (2020), pp. 1-4. (Intervento presentato al convegno 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 tenutosi a mys nel 2020) [10.1109/EDTM47692.2020.9117812].

Engineering Atom Scale Defects in Materials for Future Electronic Devices

Padovani A.
2020

Abstract

A multiscale simulation platform predicts the effect of atomic level defects in thin films on the electrical characteristics of nanoscale devices and identifies ways to engineer these defects to achieve optimum performance and reliability in logic and memory circuits.
2020
4th Electron Devices Technology and Manufacturing Conference, EDTM 2020
mys
2020
1
4
Pramanik, D.; Nardi, F.; Padovani, A.
Engineering Atom Scale Defects in Materials for Future Electronic Devices / Pramanik, D.; Nardi, F.; Padovani, A.. - (2020), pp. 1-4. (Intervento presentato al convegno 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 tenutosi a mys nel 2020) [10.1109/EDTM47692.2020.9117812].
File in questo prodotto:
File Dimensione Formato  
(D. Pramanik - EDTM 2020) Engineering Atom Scale Defects in Materials for Future Electronic Devices.pdf

Accesso riservato

Tipologia: Versione pubblicata dall'editore
Dimensione 1.4 MB
Formato Adobe PDF
1.4 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1274807
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact