Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.

Standards for the Characterization of Endurance in Resistive Switching Devices / Lanza, M.; Waser, R.; Ielmini, D.; Yang, J. J.; Goux, L.; Sune, J.; Kenyon, A. J.; Mehonic, A.; Spiga, S.; Rana, V.; Wiefels, S.; Menzel, S.; Valov, I.; Villena, M. A.; Miranda, E.; Jing, X.; Campabadal, F.; Gonzalez, M. B.; Aguirre, F.; Palumbo, F.; Zhu, K.; Roldan, J. B.; Puglisi, F. M.; Larcher, L.; Hou, T. -H.; Prodromakis, T.; Yang, Y.; Huang, P.; Wan, T.; Chai, Y.; Pey, K. L.; Raghavan, N.; Duenas, S.; Wang, T.; Xia, Q.; Pazos, S.. - In: ACS NANO. - ISSN 1936-0851. - 15:11(2021), pp. 17214-17231. [10.1021/acsnano.1c06980]

Standards for the Characterization of Endurance in Resistive Switching Devices

Puglisi F. M.;Larcher L.;
2021

Abstract

Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
15
11
17214
17231
Standards for the Characterization of Endurance in Resistive Switching Devices / Lanza, M.; Waser, R.; Ielmini, D.; Yang, J. J.; Goux, L.; Sune, J.; Kenyon, A. J.; Mehonic, A.; Spiga, S.; Rana, V.; Wiefels, S.; Menzel, S.; Valov, I.; Villena, M. A.; Miranda, E.; Jing, X.; Campabadal, F.; Gonzalez, M. B.; Aguirre, F.; Palumbo, F.; Zhu, K.; Roldan, J. B.; Puglisi, F. M.; Larcher, L.; Hou, T. -H.; Prodromakis, T.; Yang, Y.; Huang, P.; Wan, T.; Chai, Y.; Pey, K. L.; Raghavan, N.; Duenas, S.; Wang, T.; Xia, Q.; Pazos, S.. - In: ACS NANO. - ISSN 1936-0851. - 15:11(2021), pp. 17214-17231. [10.1021/acsnano.1c06980]
Lanza, M.; Waser, R.; Ielmini, D.; Yang, J. J.; Goux, L.; Sune, J.; Kenyon, A. J.; Mehonic, A.; Spiga, S.; Rana, V.; Wiefels, S.; Menzel, S.; Valov, I.; Villena, M. A.; Miranda, E.; Jing, X.; Campabadal, F.; Gonzalez, M. B.; Aguirre, F.; Palumbo, F.; Zhu, K.; Roldan, J. B.; Puglisi, F. M.; Larcher, L.; Hou, T. -H.; Prodromakis, T.; Yang, Y.; Huang, P.; Wan, T.; Chai, Y.; Pey, K. L.; Raghavan, N.; Duenas, S.; Wang, T.; Xia, Q.; Pazos, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1256817
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