PIN radiation detectors and other test-structures have been fabricated on FZ high-resistivity (2 kΩ cm), N-type silicon substrate by a planar process that features three different alternative extrinsic-gettering techniques. Extremely low leakage-current values have been measured for these devices, confirming the effectiveness of gettering procedures. In particular, phosphorus-doped polysilicon used as a gettering layer on the back-side of the wafer has provided the best results in terms of leakage-current and generation lifetime values.
Low leakage process for silicon radiation detectors / Dalla Betta, Gian-Franco; Verzellesi, Giovanni; Pignatel Giorgio, U.; Boscardin, Maurizio. - In: ALTA FREQUENZA - RIVISTA DI ELETTRONICA. - ISSN 1120-1908. - 7:4(1995), pp. 52-54.
Low leakage process for silicon radiation detectors
Verzellesi Giovanni;
1995
Abstract
PIN radiation detectors and other test-structures have been fabricated on FZ high-resistivity (2 kΩ cm), N-type silicon substrate by a planar process that features three different alternative extrinsic-gettering techniques. Extremely low leakage-current values have been measured for these devices, confirming the effectiveness of gettering procedures. In particular, phosphorus-doped polysilicon used as a gettering layer on the back-side of the wafer has provided the best results in terms of leakage-current and generation lifetime values.
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