In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials. © 2007 IEEE.
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs / Sangiorgi, E.; Palestri, P.; Esseni, D.; Fiegna, C.; Selmi, L.. - 2007:(2007), pp. 48-57. (Intervento presentato al convegno ESSDERC 2007 - 37th European Solid-State Device Research Conference tenutosi a Munich, deu nel 2007) [10.1109/ESSDERC.2007.4430881].
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
Palestri P.;Selmi L.
2007
Abstract
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials. © 2007 IEEE.
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