We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.
On the interpretation of MOS impedance data in both series and parallel circuit topologies / Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Floyd, L.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, P. K.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 185:(2021), pp. 108098-108099. [10.1016/j.sse.2021.108098]
On the interpretation of MOS impedance data in both series and parallel circuit topologies
Palestri P.;Selmi L.;
2021
Abstract
We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
