In this study Cathodoluminescence spectroscopy has been used for the first time in order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results evidence a base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism can be responsible of that. Therefore Cathodoluminescence can be used as a non destructive technique to study Berillium outdiffusion.
Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs / Cattani, L., Salviati, G., Borgarino, M., Menozzi, R., Fantini, F., Lazzarini, L., Fregonara Carlo, Z.. - (1997), pp. 49-54. (Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO London, UK, 1997).
Cathodoluminescence investigation of stress-induced Berillium outdiffusion in AlGaAs/GaAs HBTs
Borgarino Mattia;Menozzi Roberto;Fantini Fausto;
1997
Abstract
In this study Cathodoluminescence spectroscopy has been used for the first time in order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results evidence a base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism can be responsible of that. Therefore Cathodoluminescence can be used as a non destructive technique to study Berillium outdiffusion.
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