The optoelectronic properties of Si nanostructures are studied ab initio to investigate their dependence on the dimensions, on the symmetry and on the bonding situations at the interfaces. We find that the dimensions are significative for the transition oscillator strengths and that the symmetry of the lattice changes the nature of the gap. The saturating species and/or the presence of dangling bonds play an important role in the formation of interface states that can occupy or leave free the band gap so making worse or improving the optical properties.
The optoelectronic properties of silicon nanostructures: The role of the interfaces / Ossicini, S.. - 1:(2001), pp. 23-26. (Intervento presentato al convegno 2001 International Semiconductor Conference tenutosi a Siaia, rou nel 2002).
The optoelectronic properties of silicon nanostructures: The role of the interfaces
Ossicini S.
2001
Abstract
The optoelectronic properties of Si nanostructures are studied ab initio to investigate their dependence on the dimensions, on the symmetry and on the bonding situations at the interfaces. We find that the dimensions are significative for the transition oscillator strengths and that the symmetry of the lattice changes the nature of the gap. The saturating species and/or the presence of dangling bonds play an important role in the formation of interface states that can occupy or leave free the band gap so making worse or improving the optical properties.
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