We use a multi-scale modeling framework to investigate time dependent dielectric breakdown (TDDB) distributions in SiO2-and HfO2-based stacks. We show that the low and thickness independent Weibull slope (β) observed in HfO2 is due to the high intrinsic defect density and to the spatial correlation of the defect generation process. We investigate the origin of the double slope observed on TDDB distributions in IL-HfO2 stacks: we have found that it is related to the stochastic nature of the bond-breakage process. This is important for a correct evaluation of the lifetime of logic devices.
Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach / Padovani, A.; Larcher, L.. - 2018-:(2018), pp. 3A.21-3A.27. (Intervento presentato al convegno 2018 IEEE International Reliability Physics Symposium, IRPS 2018 tenutosi a usa nel 2018) [10.1109/IRPS.2018.8353552].
Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach
Padovani A.;Larcher L.
2018
Abstract
We use a multi-scale modeling framework to investigate time dependent dielectric breakdown (TDDB) distributions in SiO2-and HfO2-based stacks. We show that the low and thickness independent Weibull slope (β) observed in HfO2 is due to the high intrinsic defect density and to the spatial correlation of the defect generation process. We investigate the origin of the double slope observed on TDDB distributions in IL-HfO2 stacks: we have found that it is related to the stochastic nature of the bond-breakage process. This is important for a correct evaluation of the lifetime of logic devices.
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