3D NAND Flash represents the unmatchable non- volatile memory concerning the bit-cost scaling efficiency and a role model for all emerging memories. Yet some reliability features of these devices i.e. quantification of the threshold voltage shift due to the lateral and vertical migration/loss of charges (LCL and VCL, respectively) is not fully understood. In this study we use a multi-scale modeling approach start from identification of the defects responsible for the charge trapping and quantify the LCL and VLC. As a part of engineering of the barrier we investigate also band-gap engineered (BGE) devices. We show that LCL dominates the charge loss during the retention and that highest portion of injected charge ends up in Al2O3 layer of BGE device.

Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers / Padovani, A.; Pesic, M.; Kumar, M. A.; Blomme, P.; Subirats, A.; Vadakupudhupalayam, S.; Baten, Z.; Larcher, L.. - 2019-:(2019), pp. 1-8. ((Intervento presentato al convegno 2019 IEEE International Reliability Physics Symposium, IRPS 2019 tenutosi a usa nel 2019 [10.1109/IRPS.2019.8720566].

Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers

Padovani A.;Larcher L.
2019

Abstract

3D NAND Flash represents the unmatchable non- volatile memory concerning the bit-cost scaling efficiency and a role model for all emerging memories. Yet some reliability features of these devices i.e. quantification of the threshold voltage shift due to the lateral and vertical migration/loss of charges (LCL and VCL, respectively) is not fully understood. In this study we use a multi-scale modeling approach start from identification of the defects responsible for the charge trapping and quantify the LCL and VLC. As a part of engineering of the barrier we investigate also band-gap engineered (BGE) devices. We show that LCL dominates the charge loss during the retention and that highest portion of injected charge ends up in Al2O3 layer of BGE device.
2019 IEEE International Reliability Physics Symposium, IRPS 2019
usa
2019
2019-
1
8
Padovani, A.; Pesic, M.; Kumar, M. A.; Blomme, P.; Subirats, A.; Vadakupudhupalayam, S.; Baten, Z.; Larcher, L.
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers / Padovani, A.; Pesic, M.; Kumar, M. A.; Blomme, P.; Subirats, A.; Vadakupudhupalayam, S.; Baten, Z.; Larcher, L.. - 2019-:(2019), pp. 1-8. ((Intervento presentato al convegno 2019 IEEE International Reliability Physics Symposium, IRPS 2019 tenutosi a usa nel 2019 [10.1109/IRPS.2019.8720566].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1223173
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