The impact of device-to-device statistical variation on Program/Erase (P/E) transients of planar TANOS devices is investigated using a multi-scale simulation approach. Atomic-level material and defect properties are first extracted from experimental results and then employed to study variability of the flat-band voltage shift. Erase characteristics are observed to be more affected by statistical variation. Interestingly, by adjusting temperature, gate voltage and/or blocking layer thickness, an optimized operating condition can be reached such that variability in 3D TANOS arrays is minimized.
Statistical Simulation to Predict Variability of TANOS Program/Erase Characteristics for Non-Volatile Memory Applications / Baten, M. Z.; Kumar, M. A.; Padovani, A.; Larcher, L.; Pramanik, D.. - (2019), pp. 203-205. (Intervento presentato al convegno 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 tenutosi a sgp nel 2019) [10.1109/EDTM.2019.8731308].
Statistical Simulation to Predict Variability of TANOS Program/Erase Characteristics for Non-Volatile Memory Applications
Padovani A.;Larcher L.;
2019
Abstract
The impact of device-to-device statistical variation on Program/Erase (P/E) transients of planar TANOS devices is investigated using a multi-scale simulation approach. Atomic-level material and defect properties are first extracted from experimental results and then employed to study variability of the flat-band voltage shift. Erase characteristics are observed to be more affected by statistical variation. Interestingly, by adjusting temperature, gate voltage and/or blocking layer thickness, an optimized operating condition can be reached such that variability in 3D TANOS arrays is minimized.
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