Due to their outstanding electronic and physical properties, two-dimensional (2D) materials have attracted much interest for the fabrication of solid-state microelectronic devices. Among all methods to synthesize 2D materials, chemical vapor deposition (CVD) is the most attractive in the field of solid-state microelectronics because it can produce high quality 2D material in a scalable manner. However, the high temperatures (>900C) required during the CVD growth of the 2D materials impede their direct synthesis on metal-coated wafers due to prohibitive metal diffusion and de-wetting. This makes necessary carrying out the 2D materials CVD growth independently on metallic foils, and transfer them on the wafers using polymer scaffolds. However, this process is slower, more expensive, and can lead to abundant contamination and cracks in the 2D material. Here we present a facile method to allow the direct growth of multilayer hexagonal boron nitride (h-BN) on Ni-coated Si wafers, which consists on placing a protective cover 30 μm above the Ni surface. The resulting h-BN stacks have been used to fabricate Au/Ti/h-BN/Ni memristors with low cycle-To-cycle variability. This work contributes to the integration of 2D materials in solid-state micro-and nano-electronic technologies.

Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices / Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M.. - In: 2D MATERIALS. - ISSN 2053-1583. - 6:3(2019), pp. 035021-035030. [10.1088/2053-1583/ab1783]

Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices

Puglisi F.;
2019

Abstract

Due to their outstanding electronic and physical properties, two-dimensional (2D) materials have attracted much interest for the fabrication of solid-state microelectronic devices. Among all methods to synthesize 2D materials, chemical vapor deposition (CVD) is the most attractive in the field of solid-state microelectronics because it can produce high quality 2D material in a scalable manner. However, the high temperatures (>900C) required during the CVD growth of the 2D materials impede their direct synthesis on metal-coated wafers due to prohibitive metal diffusion and de-wetting. This makes necessary carrying out the 2D materials CVD growth independently on metallic foils, and transfer them on the wafers using polymer scaffolds. However, this process is slower, more expensive, and can lead to abundant contamination and cracks in the 2D material. Here we present a facile method to allow the direct growth of multilayer hexagonal boron nitride (h-BN) on Ni-coated Si wafers, which consists on placing a protective cover 30 μm above the Ni surface. The resulting h-BN stacks have been used to fabricate Au/Ti/h-BN/Ni memristors with low cycle-To-cycle variability. This work contributes to the integration of 2D materials in solid-state micro-and nano-electronic technologies.
6
3
035021
035030
Chemical vapor deposition of hexagonal boron nitride on metal-coated wafers and transfer-free fabrication of resistive switching devices / Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M.. - In: 2D MATERIALS. - ISSN 2053-1583. - 6:3(2019), pp. 035021-035030. [10.1088/2053-1583/ab1783]
Jing, X.; Puglisi, F.; Akinwande, D.; Lanza, M.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1190095
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 14
  • ???jsp.display-item.citation.isi??? 15
social impact