In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out.
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves / Caruso, E.; Lin, J.; Burke, K. F.; Cherkaoui, K.; Esseni, D.; Gity, F.; Monaghan, S.; Palestri, P.; Hurley, P.; Selmi, L.. - (2018). (Intervento presentato al convegno WODIM 2018 - 20th Workshop on Dielectrics in Microelectronics tenutosi a Berlino nel Giugno).
Physics-based TCAD analysis of Border and Interface traps in Al2O3/InGaAs stacks using Multifrequency CV-curves
Palestri, P.;Selmi, L.
2018
Abstract
In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out.
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