In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy / Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca. - (2010), pp. 94-97. (Intervento presentato al convegno 2010 International Conference on Microelectronic Test Structures, ICMTS 2010 tenutosi a Hiroshima, jpn nel Marzo 2010) [10.1109/ICMTS.2010.5466851].
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy
SELMI, Luca
2010
Abstract
In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.
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