In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.

Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy / Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca. - (2010), pp. 94-97. (Intervento presentato al convegno 2010 International Conference on Microelectronic Test Structures, ICMTS 2010 tenutosi a TOKYO (GIAPPONE) nel Marzo 2010) [10.1109/ICMTS.2010.5466851].

Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy

SELMI, Luca
2010-01-01

Abstract

In this work, we explore the potential of Kelvin Force Microscopy (KFM) measurements to investigate the lateral charge transport in SiN layers with two different compositions (standard, std, and Silicon rich, Si-rich). The dynamics of the lateral spread of the trapped charge is analyzed with the help of three dimensional numerical device simulations.
2010
2010 International Conference on Microelectronic Test Structures, ICMTS 2010
TOKYO (GIAPPONE)
Marzo 2010
94
97
Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy / Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca. - (2010), pp. 94-97. (Intervento presentato al convegno 2010 International Conference on Microelectronic Test Structures, ICMTS 2010 tenutosi a TOKYO (GIAPPONE) nel Marzo 2010) [10.1109/ICMTS.2010.5466851].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163534
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