In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of nonconventional device structures and channel materials.
The Monte Carlo approach to transport modeling in decananometer MOSFETs / Sangiorgi, E; Palestri, Pierpaolo; Esseni, David; Fiegna, C; Selmi, Luca. - (2007), pp. 48-57. (Intervento presentato al convegno ESSCIRC 2007 - 33rd European Solid-State Circuits Conference tenutosi a Munich (DEU) nel 11-13 settembre 2007) [10.1109/ESSCIRC.2007.4430248].
The Monte Carlo approach to transport modeling in decananometer MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2007
Abstract
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of nonconventional device structures and channel materials.
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