Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility / Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche. - 2007:(2007), pp. 315-318. (Intervento presentato al convegno ESSDERC 2007 - 37th European Solid-State Device Research Conference tenutosi a Munich, deu nel 11-13/09/2007) [10.1109/ESSDERC.2007.4430941].
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility
SELMI, Luca;
2007
Abstract
Strained silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 plusmn 0.03 % in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm2/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.File | Dimensione | Formato | |
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