Tunnel-FETs are studied in a mixed device/circuit simulation environment. Model parameters calibrated on experimental DC as well as pulsed characterizations are then used for 6T SRAM cells investigation. Issues concerning fabricated devices, as the ambipolarity and the uni-directionality, are addressed at both device and circuit levels. Our results suggest that ambipolarity needs to be solved through device engineering and/or fabrication process improvements, while issues related to uni-directionality may be mitigated with a proper circuit design.
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires / S., Strangio; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; F., Crupi. - STAMPA. - (2014), pp. 282-285. (Intervento presentato al convegno 44th European Solid-State Device Research Conference, ESSDERC 2014 tenutosi a Venezia (Italy) nel 22-26 Settembre 2014) [10.1109/ESSDERC.2014.6948815].
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires
PALESTRI, Pierpaolo;SELMI, Luca;
2014
Abstract
Tunnel-FETs are studied in a mixed device/circuit simulation environment. Model parameters calibrated on experimental DC as well as pulsed characterizations are then used for 6T SRAM cells investigation. Issues concerning fabricated devices, as the ambipolarity and the uni-directionality, are addressed at both device and circuit levels. Our results suggest that ambipolarity needs to be solved through device engineering and/or fabrication process improvements, while issues related to uni-directionality may be mitigated with a proper circuit design.
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