An improved model for charge injection through ONO gate stacks, that comprises carrier transport in the conduction band of the silicon nitride (Si3N4), is used to investigate the program/retention sequence of Si3N4 based (SONOS/TANOS) non volatile memories without making assumptions on the initial distribution of the trapped charge at the beginning of retention. We show that carrier transport in the Si3N4 layer impacts the spatial charge distribution and consequently several other aspects of the retention transient. The interpretation of the Arrehnius plots of the high temperature retention data, typically used to infer the trap depth from the retention activation energy is discussed. The model provides a simple explanation of the small threshold voltage increase observed during retention experiments of thick tunnel oxide ONO stacks.

Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories / E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović. - STAMPA. - (2008), pp. 107-110. (Intervento presentato al convegno ESSDERC 2008 - 38th European Solid-State Device Research Conference tenutosi a Edimburgo (GB) nel 15-19 Settembre 2008) [10.1109/ESSDERC.2008.4681710].

Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories

PALESTRI, Pierpaolo;SELMI, Luca;
2008

Abstract

An improved model for charge injection through ONO gate stacks, that comprises carrier transport in the conduction band of the silicon nitride (Si3N4), is used to investigate the program/retention sequence of Si3N4 based (SONOS/TANOS) non volatile memories without making assumptions on the initial distribution of the trapped charge at the beginning of retention. We show that carrier transport in the Si3N4 layer impacts the spatial charge distribution and consequently several other aspects of the retention transient. The interpretation of the Arrehnius plots of the high temperature retention data, typically used to infer the trap depth from the retention activation energy is discussed. The model provides a simple explanation of the small threshold voltage increase observed during retention experiments of thick tunnel oxide ONO stacks.
2008
ESSDERC 2008 - 38th European Solid-State Device Research Conference
Edimburgo (GB)
15-19 Settembre 2008
107
110
E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories / E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović. - STAMPA. - (2008), pp. 107-110. (Intervento presentato al convegno ESSDERC 2008 - 38th European Solid-State Device Research Conference tenutosi a Edimburgo (GB) nel 15-19 Settembre 2008) [10.1109/ESSDERC.2008.4681710].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163500
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