Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
Monte Carlo modeling of nanometer scale MOSFETs / Sangiorgi, E; Palestri, Pierpaolo; Esseni, David; Fiegna, C; Selmi, Luca. - (2007), pp. 68-73. (Intervento presentato al convegno XIV International Workshop on the Physics of Semiconductor Devices (IWPSD) tenutosi a Mumbai (India) nel Dicembre) [10.1109/IWPSD.2007.4472456].
Monte Carlo modeling of nanometer scale MOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2007
Abstract
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
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