The impact of fin thickness nonuniformities on carrier transport in n-type FinFETs is analyzed with a Multi-Subband Monte Carlo technique, which allows for an accurate description of the quasi-ballistic transport taking place in short channel devices and which comprises the dominant scattering mechanisms as well as a semi-empirical technique to handle quantization effects in the transport direction. We found that the impact of channel thickness discontinuity on the on-current is larger when the nonuniformities are located close to the Virtual Source of the device. Furthermore, the sensitivity of the on-current to thickness nonuniformity is essentially the same when considering devices with different crystal orientations. Comparison with drift-diffusion simulations reveals substantial differences in the predicted trends of the sensitivity of the drain current to thickness fluctuations in these nanoscale devices.

Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs / Serra, N; Palestri, Pierpaolo; SMIT G. D., J; Selmi, Luca. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 53:4(2009), pp. 424-432. [10.1016/j.sse.2008.09.021]

Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs

PALESTRI, Pierpaolo;SELMI, Luca
2009

Abstract

The impact of fin thickness nonuniformities on carrier transport in n-type FinFETs is analyzed with a Multi-Subband Monte Carlo technique, which allows for an accurate description of the quasi-ballistic transport taking place in short channel devices and which comprises the dominant scattering mechanisms as well as a semi-empirical technique to handle quantization effects in the transport direction. We found that the impact of channel thickness discontinuity on the on-current is larger when the nonuniformities are located close to the Virtual Source of the device. Furthermore, the sensitivity of the on-current to thickness nonuniformity is essentially the same when considering devices with different crystal orientations. Comparison with drift-diffusion simulations reveals substantial differences in the predicted trends of the sensitivity of the drain current to thickness fluctuations in these nanoscale devices.
2009
53
4
424
432
Multi-Subband Monte Carlo simulations of ION degradation due to fin thickness fluctuations in FinFETs / Serra, N; Palestri, Pierpaolo; SMIT G. D., J; Selmi, Luca. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 53:4(2009), pp. 424-432. [10.1016/j.sse.2008.09.021]
Serra, N; Palestri, Pierpaolo; SMIT G. D., J; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163429
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