The aim of this paper is to assess the capability of TCAD tools to accurately model hot electron injection in advanced device architecture versus state of the art full band Monte Carlo.
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices / A., Zaka; Q., Rafhay; Palestri, Pierpaolo; R., Clerc; D., Rideau; Selmi, Luca; C., Tavernier; H., Jaouen. - (2009), pp. 1-4. (Intervento presentato al convegno 2009 International Semiconductor Device Research Symposium, ISDRS '09 tenutosi a College Park, MD, usa nel dicembre) [10.1109/ISDRS.2009.5378310].
On the Accuracy of Current TCAD Hot Carrier Injection Models for the Simulation of Degradation Phenomena in Nanoscale Devices
PALESTRI, Pierpaolo;SELMI, Luca;
2009
Abstract
The aim of this paper is to assess the capability of TCAD tools to accurately model hot electron injection in advanced device architecture versus state of the art full band Monte Carlo.
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