Accurate Schrödinger-Poisson and Multi-Subband Monte Carlo simulations are used to investigate the effect of interface states at the channel-insulator interface of In0:53Ga0:47As MOSFETs. Acceptor states with energy inside the conduction band of the semiconductor can explain the dramatic Fermi level pinning observed in the experiments. Our results show that these states significantly impact the electrical mobility measurements but they appear to have a limited influence on the static current drive of short channel devices.
Accurate Schrödinger-Poisson and Multi-Subband Monte Carlo simulations are used to investigate the effect of interface states at the channel-insulator interface of In0.53Ga0.47As MOSFETs. Acceptor states with energy inside the conduction band of the semiconductor can explain the dramatic Fermi level pinning observed in the experiments. Our results show that these states significantly impact the electrical mobility measurements but they appear to have a limited influence on the static current drive of short channel devices.
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs / Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 108:(2015), pp. 90-96. [10.1016/j.sse.2014.12.011]
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs
SELMI, Luca
2015-01-01
Abstract
Accurate Schrödinger-Poisson and Multi-Subband Monte Carlo simulations are used to investigate the effect of interface states at the channel-insulator interface of In0:53Ga0:47As MOSFETs. Acceptor states with energy inside the conduction band of the semiconductor can explain the dramatic Fermi level pinning observed in the experiments. Our results show that these states significantly impact the electrical mobility measurements but they appear to have a limited influence on the static current drive of short channel devices.
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