We present new results on the influence of radiationinduced damage on the electron Impact Ionization (I.I.) coefficient , suggesting a small but distinct reduction of at high fluence with respect to unirradiated silicon. Experiments on thick (1.5 m) and thin (1 m) epitaxial silicon samples confirm that such a reduction of is expected even in cases where impact ionization is not simply a field driven process because of strongly non local transport conditions. A consistent increase on the breakdown voltage of a 3D radiation detector has been evaluated by means of TCAD simulations using the experimentally extracted I.I. coefficient for irradiated silicon. These results clarify the impact of radiation damage on some of the key model parameters for TCAD simulations and allow for improved accuracy toward predictive breakdown simulations of silicon particle detectors, e.g., for the ATLAS experiment.

Experimental Determination of the Impact Ionization Coefficients in Irradiated Silicon / Cristofoli, Andrea; Palestri, Pierpaolo; Giordani, Mario; Cindro, V.; DALLA BETTA, G. F; Selmi, Luca. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 58(2011), pp. 2091-2096. [10.1109/TNS.2011.2160026]

Experimental Determination of the Impact Ionization Coefficients in Irradiated Silicon

SELMI, Luca
2011

Abstract

We present new results on the influence of radiationinduced damage on the electron Impact Ionization (I.I.) coefficient , suggesting a small but distinct reduction of at high fluence with respect to unirradiated silicon. Experiments on thick (1.5 m) and thin (1 m) epitaxial silicon samples confirm that such a reduction of is expected even in cases where impact ionization is not simply a field driven process because of strongly non local transport conditions. A consistent increase on the breakdown voltage of a 3D radiation detector has been evaluated by means of TCAD simulations using the experimentally extracted I.I. coefficient for irradiated silicon. These results clarify the impact of radiation damage on some of the key model parameters for TCAD simulations and allow for improved accuracy toward predictive breakdown simulations of silicon particle detectors, e.g., for the ATLAS experiment.
58
2091
2096
Experimental Determination of the Impact Ionization Coefficients in Irradiated Silicon / Cristofoli, Andrea; Palestri, Pierpaolo; Giordani, Mario; Cindro, V.; DALLA BETTA, G. F; Selmi, Luca. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 58(2011), pp. 2091-2096. [10.1109/TNS.2011.2160026]
Cristofoli, Andrea; Palestri, Pierpaolo; Giordani, Mario; Cindro, V.; DALLA BETTA, G. F; Selmi, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1163376
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