In this paper we propose and validate a simple approach to empirically account for quantum effects in the transport direction of MOS transistors (i.e. source and drain tunneling and delocalized nature of the carrier wavepacket) in multi-subband Monte Carlo simulators, that already account for quantization in the direction normal to the semiconductor-oxide interface by solving the 1D Schrödinger equation in each section of the device. The model has been validated and calibrated against ballistic non-equilibrium Green's function simulations over a wide range of gate lengths, voltage biases and temperatures. The proposed model has just one adjustable parameter and our results show that it can achieve a good agreement with the NEGF approach.
An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations / Palestri, Pierpaolo; Lucci, Luca; DEI TOS, S; Esseni, David; Selmi, Luca. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 25(2010), p. 055011.
Data di pubblicazione: | 2010 |
Titolo: | An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations |
Autore/i: | Palestri, Pierpaolo; Lucci, Luca; DEI TOS, S; Esseni, David; Selmi, Luca |
Autore/i UNIMORE: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/0268-1242/25/5/055011 |
Rivista: | |
Volume: | 25 |
Pagina iniziale: | 055011 |
Codice identificativo ISI: | WOS:000276888900011 |
Codice identificativo Scopus: | 2-s2.0-77951246536 |
Citazione: | An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations / Palestri, Pierpaolo; Lucci, Luca; DEI TOS, S; Esseni, David; Selmi, Luca. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 25(2010), p. 055011. |
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