In this paper we propose and validate a simple approach to empirically account for quantum effects in the transport direction of MOS transistors (i.e. source and drain tunneling and delocalized nature of the carrier wavepacket) in multi-subband Monte Carlo simulators, that already account for quantization in the direction normal to the semiconductor-oxide interface by solving the 1D Schrödinger equation in each section of the device. The model has been validated and calibrated against ballistic non-equilibrium Green's function simulations over a wide range of gate lengths, voltage biases and temperatures. The proposed model has just one adjustable parameter and our results show that it can achieve a good agreement with the NEGF approach.

An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations / Palestri, Pierpaolo; Lucci, Luca; DEI TOS, S; Esseni, David; Selmi, Luca. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - 25(2010), p. 055011.

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