In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of the corner regions on the total current. A method for the extraction of the threshold voltage and of the subthreshold slope of the corner region has been proposed, and the resulting values have been analyzed in order to understand their effects on the device characteristics.
Corner Effect and Local Volume Inversion in SiNW FETs / DE MICHIELIS, Luca; Moselund, K. E.; Selmi, Luca; Ionescu, A. M.. - In: IEEE TRANSACTIONS ON NANOTECHNOLOGY. - ISSN 1536-125X. - 10:4(2011), pp. 810-816. [10.1109/TNANO.2010.2080284]
Corner Effect and Local Volume Inversion in SiNW FETs
SELMI, Luca;
2011
Abstract
In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of the corner regions on the total current. A method for the extraction of the threshold voltage and of the subthreshold slope of the corner region has been proposed, and the resulting values have been analyzed in order to understand their effects on the device characteristics.
| File | Dimensione | Formato | |
|---|---|---|---|
|
De_Michielis_TNT_2011.pdf
Accesso riservato
Dimensione
925.72 kB
Formato
Adobe PDF
|
925.72 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
