We report mobility simulations for long channel Si and InGaAs MOSFETs as a function of the semiconductor film thickness and inversion charge. Calculations account for numerous relevant scattering mechanisms and surface roughness is described by the recently developed non-linear model [1]. Reasonable agreement with available experiments is obtained employing the measured surface roughness r.m.s. value. The results reveal that the film thickness dependence of mobility in III-V MOSFETs is weaker than predicted by the T6w law typically observed in silicon devices.

Improved surface roughness modeling and mobility projections in thin film MOSFETs / Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2015), pp. 306-309. ((Intervento presentato al convegno 45th European Solid-State Device Research Conference (ESSDERC) tenutosi a Graz, Austria nel 14-18 settembre 2015 [10.1109/ESSDERC.2015.7324775].

Improved surface roughness modeling and mobility projections in thin film MOSFETs

SELMI, Luca
2015

Abstract

We report mobility simulations for long channel Si and InGaAs MOSFETs as a function of the semiconductor film thickness and inversion charge. Calculations account for numerous relevant scattering mechanisms and surface roughness is described by the recently developed non-linear model [1]. Reasonable agreement with available experiments is obtained employing the measured surface roughness r.m.s. value. The results reveal that the film thickness dependence of mobility in III-V MOSFETs is weaker than predicted by the T6w law typically observed in silicon devices.
45th European Solid-State Device Research Conference (ESSDERC)
Graz, Austria
14-18 settembre 2015
306
309
Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Improved surface roughness modeling and mobility projections in thin film MOSFETs / Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca. - ELETTRONICO. - (2015), pp. 306-309. ((Intervento presentato al convegno 45th European Solid-State Device Research Conference (ESSDERC) tenutosi a Graz, Austria nel 14-18 settembre 2015 [10.1109/ESSDERC.2015.7324775].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/1163329
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