In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
Comparison of Advanced Transport Models for Nanoscale nMOSFETS / Palestri, Pierpaolo; Alexander, C; Asenov, A; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, David; Ghetti, A; Fiegna, C; Fiori, G; AUBRY FORTUNA, V; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, B; Reggiani, S; Riddet, C; SAINT MARTIN, J; Sangiorgi, E; Schenk, A; Selmi, Luca; Silvestri, L; Walczak, J.. - (2009), pp. 125-128. (Intervento presentato al convegno European Workshop on Ultimate Integration of Silicon (ULIS) tenutosi a Aachen (Germania), marzo 2009 nel Marzo 2009) [10.1109/ULIS.2009.4897554].
Comparison of Advanced Transport Models for Nanoscale nMOSFETS
SELMI, Luca;
2009-01-01
Abstract
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
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