In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
Comparison of Advanced Transport Models for Nanoscale nMOSFETS / Palestri, P., Alexander, C., Asenov, A., Baccarani, G., Bournel, A., Braccioli, M., Cheng, B., Dollfus, P., Esposito, A., Esseni, D., Ghetti, A., Fiegna, C., Fiori, G., Aubry Fortuna, V., Iannaccone, G., Martinez, A., Majkusiak, B., Monfray, B., Reggiani, S., Riddet, C., et al.. - (2009), pp. 125-128. (10th International Conference on ULtimate Integration of Silicon, ULIS 2009 Aachen, deu Marzo 2009) [10.1109/ULIS.2009.4897554].
Comparison of Advanced Transport Models for Nanoscale nMOSFETS
PALESTRI, Pierpaolo;SELMI, Luca;
2009
Abstract
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo methods. Template devices representative of 22 nm Double-Gate and 32 nm FDSOI transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Our results set a benchmark to assess modeling tools for nanometric MOSFETs.
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